Abstract
The mechanism, kinetics of growth and properties of thin oxide films on Al and Al–Sn alloys (containing up to 0.40% Sn) in borate buffer solutions have been studied by means of potentiodynamic, galvanostatic and impedance techniques. The results obtained indicate that the growth of oxide films on Al and Al–Sn alloys takes place due to ionic conductivity under the influence of the high electric field through the oxide film according to an exponential law like on valve metals. The constants of the exponential law ( A and B), ionic conductivity through the oxide film, field strength and half barrier width have been calculated. Impedance measurements provided an insight into the characteristic sizes of oxide films. The resistance and thickness of the oxide film has been found to increase with the increase in tin content in the alloy. The paper also defines the current efficiency in the formation of the oxide film. An increase of tin content in the alloy increases the value of current efficiency. It has been established that an Sn content of 0.02% in the alloy has no effect on the growth and properties of the oxide film on Al. However, an Sn content ≥0.09% has a significant effect on the anodic film growth on Al.
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