Year-end Sale % OFF 
Abstract
Properties of thin oxide films on Al and Al–Sn alloys (with Sn content of 0.02, 0.09, 0.20 and 0.40 wt.%) formed either naturally or anodically in borate buffer solutions were investigated by means of electrochemical impedance spectroscopy. Equivalent circuits have been proposed that completely illustrate the Al(Al–Sn alloy)/oxide film/electrolyte systems examined, and properties of oxide films were determined. The stability (thickness and resistance) of oxide films has been found to increase with increased Sn content in the alloy, with increased passivation potential, and with longer time of anodising. The increase in temperature of anodising significantly reduces impedance in systems observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
