Abstract
Kinetics of thin oxide film growth on the (001) surface of single crystals of Fe-Si alloys in the concentration range 2.·5–12.·0wt.%Si at 400 °C and at oyxgen partial pressure 30 torr have been studied using two optical methods—ellipsometry and interference microscopy. With respect to the complex optical properties of oxide films, ellipsometry can determine the thickness of very thin films up to ~ 300Å. For thicker films, interference microscopy is suitable. Kinetic results showing the effect of Si concentration in the alloys on oxidation rate are given and some problems of the mechanism of oxide films growth on Fe-Si alloys at the given conditions are briefly discussed.
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