Abstract

The paper studies the kinetic equation forelectron transport in semiconductors.New formulas for the heat generation rate are derivedby analyzing the basic scattering mechanisms.In addition, properties of thesteady state distribution are discussed and possibleextensions of the deviational particle Monte Carlo methodto the area of electron transport are proposed.

Highlights

  • Kinetic theory is a common tool for modelling charge transport in semiconductors ([6, 10, 8])

  • The continued miniaturization of semiconductor devices leads to new challenges related to heat generation ([20, 12, 11, 16])

  • The purpose of this paper is to contribute to the study of heat generation in semiconductor devices

Read more

Summary

Introduction

Kinetic theory is a common tool for modelling charge transport in semiconductors ([6, 10, 8]). The direct simulation Monte Carlo (DSMC) method for the Boltzmann transport equation has been extended to cover the generation and distribution of heat in the device. The purpose of this paper is to contribute to the study of heat generation in semiconductor devices. New formulas for the heat generation rate are derived from the kinetic equation by analyzing the scattering mechanisms.

Kinetic equation
Stochastic model
Scattering mechanisms
Heat generation rate
Deviational particle Monte Carlo
Steady state
Deviational particles
Comments

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.