Abstract
The dark conductivity σD and the photoconductivity σPh of intrinsic and n-type (phosphorus doped) a-Si: H films prepared by rf glow discharge of silane gas has been studied. The samples have been prepared under different experimental conditions which include change of rf power, substrate temperature and dopant concentration. The most significant result has been the change in dark conductivity and photoconductivity with the change of rf power within a limited range of 2 to 30 Watts. As shown by infrared spectroscopy the chances in σD and σPh with rf power are mainly due to the change of hydrogen content. The appearance of a kink in σD vs 1/T plot (at T' with higher slope at T>T') has been explained as due to the effect of statistical shift of the Fermi level EF.
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