Abstract
The results of light exposure on dark conductivity, its activation energy, and the photoconductivity of a-Si:F:H samples are presented. A light-induced decrease in photoconductivity by a factor of about 3 is observed. The changes in dark conductivity are rather unusual. The direction of the change is found to depend on the position of the Fermi level. At a particular activation energy (about 0.85 ev) no light-induced change in the dark conductivity occurs. This behaviour has been explained in terms of a model. The temperature dependence of the defect creation and annealing has also been reported.
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