Abstract
The absence of deep traps for electrons in the spectrum of <TEX>$As_{40}Se_{30}S_30$</TEX> localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous <TEX>$As_{40}Se_{30}S_30$</TEX> films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.
Full Text
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call