Abstract
<p>Bipolar photoconductivity and bipolar drift of charge carriers have been established in amorphous chalcogenide glassy semiconductors As<sub>40</sub>Se<sub>30</sub>S<sub>30</sub> films, obtained by ion-plasma rf sputtering, in contrast to the films of these materials obtained by thermal evaporation. Observed results were due to the lack of deep traps for electrons in the spectrum of localized film states obtained by ion sputtering.</p>
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