Abstract
AbstractThe usual p‐type dopants of SiC, B, and Al, do not produce really shallow levels. In fact, boron can give rise to a secondary very deep acceptor level as well. The picture is complicated by hydrogen which is readily incorporated during in‐growth doping into p‐type material and can passivate both dopants but to a different degree. First principle calculations are reported regarding the interaction of hydrogen with B and Al in SiC. The results explain why hydrogen is incorporated in much higher amounts into B‐doped than into Al‐doped samples, and also reveal the influences of hydrogen on boron to produce the shallower acceptor. It will be shown that hydrogen incorporation during growth does not influence Al. Finally an Al–N–Al complex is proposed as a shallower acceptor in SiC.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
