Abstract
GaAs layers grown by molecular-beam epitaxy (MBE) have been postgrowth hydrogenated by implanting low-energy hydrogen ions with a Kaufman source. Changes in the concentration of deep and shallow levels have been studied by DLTS and C–V measurements, respectively, for different hydrogen doses. A close match is obtained between the present results and those obtained for GaAs grown by the same MBE machine in hydrogen backpressure. Therefore, it is concluded that MBE growth with hydrogen results in hydrogen incorporation in the layers, and hence, in the passivation of shallow and deep levels.
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