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Abstract
It is established that nonuniformity of electrical parameters conditioned by a nonuniform distribution of excess Te exists along the single-crystal PbTe ingot. In addition to the shallow acceptor and donor levels, deep acceptor levels with activation energy of ∼0.1 eV exist in the band gap of the PbTe single crystals. These levels are not associated with excess Te and manifest themselves in the samples with a low concentration in the shallow levels at relatively high temperatures.
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