Abstract
High VI/II transport rate ratio for Al-doped ZnTe homoepitaxial layers grown by metalorganic vapor phase epitaxy leads to distinct shallow and deep donor-acceptor-pair (DAP) emissions in the photoluminescence spectrum together with donor-related bound excitonic emission (I d ), independent of the growth conditions. From the analysis of excitation power dependence of shallow DAP emission, donor and acceptor levels are estimated to be ~19.5 and ~53.5meV for Al-doped ZnTe layer, respectively. Thermal quenching effects of Id and shallow DAP were examined based on two step quenching processes, and the derived donor ionization energy is of ~ 19 meV and acceptor level is of ~52.8 meV, which are in good agreement with the result on its excitation power dependence for the latter case.
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