SOME CONSIDERATIONS IN THE NUMERICAL SIMULATION OF A SEMI-CONDUCTOR DEVICE

Abstract

This chapter focuses on a few considerations in the numerical simulation of a semiconductor device. The steady-state equations for normalized electron and hole concentrations (n, p) and field E in a one-dimensional semiconductor with Shockley–Read–Hall recombination. Typically, the quantities involved have sharp transitional behavior—changing by several orders of magnitude in a narrow interval—near the junctions. Some consideration was given to automatic mesh-spacing in the discretization used. The Gummel–deMari iteration computes U, E from n, p and then new n, p from these by Shockley–Read–Hall recombination. U has smoother behavior near the junctions than do n, p. A new discretization was derived, therefore, with local truncation error determined by derivatives of U rather than of n and p.