Abstract
We report solution-processed undoped ZnO, 1 at% In doped ZnO (IZO) and 1 at% Ag nanowires (AgNWs) embedded IZO thin film transistors (TFTs). The mobility of prepared TFTs was enhanced compared to undoped ZnO, and AgNWs embedded IZO TFT exhibited excellent electrical performances with high field-effect mobility of 38.17 cm2V−1s−1 and high on/off current ratio on the order of 107. The energy dispersive x-ray (EDX) elemental mapping and x-ray photon spectroscopy (XPS) analysis demonstrated that the Ag particles are diffused into IZO thin film from AgNWs, suggesting that AgNWs played dual role in the channel layer which served as an acceptor charge carrier and a conductive path for charge carriers. SEM images showed that IZO film had increased grain size in comparison to undoped ZnO film and that AgNWs were well interconnected IZO film. The increment in the grain size in the IZO film and well connected AgNWs in the IZO films lead to enhanced mobility of the TFTs.
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