Abstract
In order to realize the true low cost potential of Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, high performance needs to be combined with simple and easily controllable atmospheric-based deposition processes. A molecular solution-based approach for CIGS deposition is proposed, using metal chalcogenide precursors dissolved in an amine-thiol solvent combination. CIGS thin films were sprayed with varying Ga content and the sprayed films were incorporated into solar cells. The effect of the Ga content on the material and device properties is investigated. A champion power conversion efficiency of 9.8% (active area) was achieved, which highlights the potential of this methodology.
Highlights
Thin film solar cells are a promising low cost alternative to waferbased cells, due to materials savings
In this work we further explore the potential of this solvent system for CIGS deposition, starting from metal sulphide solution precursors
A molecular solution-based approach is proposed for CIGS deposition, starting from metal chalcogenide precursor solutions
Summary
Thin film solar cells are a promising low cost alternative to waferbased cells, due to materials savings Among other advantages, these types of solar cells are compatible with low cost, atmospheric-based fabrication processes which can result in significant cost reductions. The most promising solution-based approach for CIGS in terms of efficiency, involves the dissolution of metal chalcogenides (Cu2S and In2Se3) and Ga metal in hydrazine [6]. Whilst these precursors are not dissolved in common solvents due to their strong covalent bonds, they can be effectively dissolved in hydrazine, in the presence of excess chalcogen [6]. These results highlight the potential of this approach and it is anticipated that further process optimization will result in higher performance
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