Abstract
Abstract Bismuth sulfide (Bi2S3) belongs to a family of metal chalcogenides in a class of non-toxic semiconductor materials, whose importance in photovoltaic and thermoelectric applications is well recognized. We have successfully prepared crystalline Bi2S3 nanorod (NR) thin films from a solution of bismuth chloride and thioacetamide via a solution process method. A possible mechanism for the growth process of the Bi2S3 NRs is proposed. Prepared Bi2S3 NR films characterized via X-ray diffraction (XRD), energy dispersive analysis (EDX), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), brunauer-emmett-teller (BET) surface area, and photoelectrochemical cells are studied. The morphology of the Bi2S3 NR reveals a photocurrent density of 0.20 mA/cm2 at 0 V bias condition under 1 sun illumination. The charge transport properties of the Bi2S3 NRs are studied via impedance spectroscopy analysis. This preparation method is economical for scale-up processes, and can also applied to the preparation of other metal sulfide semiconductors.
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