Abstract
PSS, and the electron selective layer cesium carbonate (Cs2CO3) was added to the interface between the backside Si wafer and the rear Ti/Ag electrode. The main process used a clean and low-cost solution process, and the annealed temperature was under 140 °C. In addition, after we inserted these two carrier selective layers, the minority carrier lifetime was prolonged from 29.98 μs to 140.81 μs, indicating its significance in reducing the recombination rate. Eventually, we demonstrated that the PCE of Si/organic heterojunction solar cells can be improved to 13.23%.
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