Abstract

Organic materials as carrier selective layers are increasingly explored towards low temperature solution processed Silicon based heterojunction solar cells. In this regard, PEDOT:PSS (poly (3,4-ethylenedioxythiophene) polystyrene sulfonate) acts as a carrier selective layer for holes, by forming a barrier for the electrons. Accordingly, here we investigate the passivation quality of PEDOT:PSS over n-type c-Si wafer and report the initial results on such heterojunction solar cells. The fabricated Ag/PEDOT:PSS/n-c-Si/n+/Al hybrid solar cell structure yielded an efficiency of 8.79%, thus indicating the viability of PEDOT:PSS as a carrier selective hole extraction layer for Si based heterojunction solar cells.

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