Abstract
In this work, to ameliorate the quantum efficiency (QE), we made a valuable development by using wide band gap material, such as lithium fluoride (LiFx), as an emitter that also helped us to achieve outstanding efficiency with silicon heterojunction (SHJ) solar cells. Lithium fluoride holds a capacity to achieve significant power conversion efficiency because of its dramatic improvement in electron extraction and injection, which was investigated using the AFORS-HET simulation. We used AFORS-HET to assess the restriction of numerous parameters which also provided an appropriate way to determine the role of diverse parameters in silicon solar cells. We manifested and preferred lithium fluoride as an interfacial layer to diminish the series resistance as well as shunt leakage and it was also beneficial for the optical properties of a cell. Due to the wide band gap and better surface passivation, the LiFx encouraged us to utilize it as the interfacial as well as the emitter layer. In addition, we used the built-in electric and band offset to explore the consequence of work function in the LiFx as a carrier selective contact layer. We were able to achieve a maximum power conversion efficiency (PEC) of 23.74%, fill factor (FF) of 82.12%, Jsc of 38.73 mA cm−2, and Voc of 741 mV by optimizing the work function and thickness of LiFx layer.
Highlights
Comprehensive consideration is needed when working with silicon heterojunction (SHJ) solar cells due to the fact of their low-temperature fabrication process and capability of gaining higher power conversion efficiency (PEC)
In the case of silicon solar cells, good quality silicon wafers are used as a substrate for cell fabrication, but in the case of on-chip antennas, we observed the opposite condition for a silicon substrate
If we talk about solar cells, the main limitations of SHJ solar cells’ efficiency are due to the low optical absorption of a-Si:H(i); high doping defects of a-Si:H(p/n); narrow bandgap; and low conductivity of the n-layer on the front side [18,19]
Summary
Comprehensive consideration is needed when working with silicon heterojunction (SHJ) solar cells due to the fact of their low-temperature fabrication process and capability of gaining higher power conversion efficiency (PEC). To achieve a high performance for SHJ solar cells, wide bandgaps with low work function-based materials, such as lithium fluoride (LiFx ), magnesium fluoride (MgFx ), titanium oxide (TiOx ), and cesium iodide (CsI), have been proposed as electron transport layers (ETLs) [26–30]. On lightly doped c-Si, when a low work function material is applied, the collection of electrons (as well as repulsion of holes) happens close to the surface This extreme concentration of electrons on surface diminishes particular heterocontact resistivity, and the chance of Shockley–Read–Hall recombination reduces due to the corresponding low hole surface concentration at the heterocontact interface. The LiFx was used as an electron carrier selective contact material with applications for an optimized interfacial layer in silicon heterojunction (SHJ) solar cells. Our report consists of a simulated study of carrier selective contact using LiFx layers with various thicknesses and a work function for the optimization of SHJ solar cells’ performance. Theoretical modeling as well as simulation studies are commonly conducted to ameliorate the
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