Abstract
Amorphous Ga2O3:CdO thin films and their thin-film transistor (TFT) photodetectors were fabricated via a simple and low-cost spin-coating method. The film optical bandgap and TFT electrical parameters can be effectively regulated via changing the Cd content. The optimized Ga2O3:CdO TFT photodetector exhibited a responsivity of 2.17 A/W and a high UV/vis. rejection of 1.88 × 104 under 260 nm at small working biases, which are comparable or even superior to the recently reported results. Systematic comparison between metal-semiconductor-metal- and TFT-type photodetectors further confirmed that our TFT photodetectors had superior detective performance and lower electrical power consumption.
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