Abstract
Copper indium disulfide–zinc indium tetrasulfide solid solutions with different contents of zinc indium tetrasulfide, ranging from 4 to 16mol% were grown by the horizontal modification of the Bridgman–Stockbarger method. Their structural properties were investigated by the X-ray analysis. Spectral dependences of their photoconductivity were analyzed at T≈30K. In the single crystals with 8–12mol% of zinc indium tetrasulfide the induced photoconduction phenomenon was observed. It could be explained by the model of three recombination and trapping centers with different capture cross sections. Indium vacancies VIn or substitutional defects CuIn are possibly the fast recombination centers; meanwhile copper vacancies VCu act as the slow recombination centers. The presence of electrically active shallow defects was confirmed by the measurements of the temperature dependences of electrical conductivity and thermally stimulated currents of these samples with n-type conductivity.
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