Abstract
Solid polyelectrolytes have been used in transistor devices to achieve gating with high capacitance. We use a solid polyethylene oxide/LiClO4 electrolyte to replace aqueous electrolytes as a gate for surface-conductive diamond field-effect transistors (FET). The resulting transistor shows characteristics comparable to those of aqueous electrolyte-gated diamond FETs. We investigate the polyelectrolyte/diamond interface with impedance spectroscopy and cyclic voltammetry, showing the electrochemical stability of the interface and capacitive gating up to 100 Hz. Hall effect measurements on the polyelectrolyte-gated devices are compared to those with liquid gates. The solid and transparent polyelectrolyte gates promise further applications for surface-conductive diamond FETs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
