Abstract
Solar cells have been obtained after solid phase regrowth of phosphorus implanted silicon induced by an incoherent light source. Their characteristics are compared with those of identically implanted cells obtained by electron beam and furnace annealing. The main results are: a) the carrier concentration and the mobility profiles are the same of those obtained by electron beam annealing; b) I-V characteristic, quantum efficiency, fill factor and efficiency of the cells annealed by incoherent light are similar to those obtained by the other annealing techniques.
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