Abstract
The decomposition of GaAs and InP surfaces during scanned electron-beam rapid thermal annealing (RTA) has been investigated. The molecules evaporated from the uncapped surfaces during annealing were collected on Si substrates and analysed using 2.0 and 3.5 MeV 4He Rutherford backscattering (RBS). The evaporation behaviour was determined in the temperature ranges 600–830° C (GaAs) and 450–630° C (InP). Deep-level transient spectroscopy, current-voltage and capacitance-voltage measurements were used to characterize the electrical properties of the annealed samples. Comparison of RBS and electrical measurements yields an optimum annealing temperature for the chosen annealing technique.
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