Abstract
As MOSFET devices within the deep sub-micron regime are modelled, it is no longer feasible to represent the charged dopants by a continuous charge distribution. In this regime an ensemble of devices, each with different spatial distributions and the number of dopants, must be modelled. However, it is computationally prohibitive to solve for the full Coulomb interaction required for particle simulators, especially for an ensemble of devices. To address this point, the paper focuses on the issue of modelling the dynamics in the presence of discrete carrier–carrier scattering and carrier-fixed impurity scattering which is suitable for efficient simulations of large ensembles of devices.
Highlights
As the length scales of Si MOSFETs continue to shrink towards the deep sub 0.1 gm regime, semiconductor device modelling must move into the new area of atomistic scale modelling
This is a new area for device modelling; at these scales it is no longer possible to represent the charged impurities by a continuous charge distribution with a definitive doping density, as is assumed in commercial simulators [1], and some of the most advanced Monte Carlo simulators [2]
The present paper addresses this problem of modelling the dynamics of discrete carrier flow in a semiconductor device by utilising a suitably simple model of the carrier-carrier scattering and/or carrier fixedimpurity scattering; such a model is necessary for efficient simulations of large ensembles of devices
Summary
As the length scales of Si MOSFETs continue to shrink towards the deep sub 0.1 gm regime, semiconductor device modelling must move into the new area of atomistic scale modelling. For self-consistency, these atomistic models should treat the conduction electrons/ holes as a discrete spatial distribution (which will fluctuate in number) as in a particle based approach such as in a Monte Carlo simulation [10,11,12]. This is an extremely heavy computational task on the atomistic scale because of the details of the injection and/or extraction of carriers at the contacts.
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