Abstract
Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(ℏ2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.
Highlights
Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O() QHD model
The original O(h2) quantum hydrodynamic (QHD) equations have been remarkably successful in simulating the effects of electron tunneling through potential barriers including single and multiple regions of negative differential resistance and hysteresis in the current-voltage curves of resonant tunneling diodes
We present simulations of a GaAs resonant tunneling diode with AlxGa_xAs double barriers at 300 K (77 K)
Summary
Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O() QHD model. The original O(h2) quantum hydrodynamic (QHD) equations have been remarkably successful in simulating the effects of electron tunneling through potential barriers including single and multiple regions of negative differential resistance and hysteresis in the current-voltage curves of resonant tunneling diodes. Quantum effects enter through the expressions for the stress tensor and the energy density: h2n 02 F
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