Abstract
This paper reports the application of small angle light scattering technique for characterization of Si samples with clusters of thermal donors. The observed dependencies of the intensity of scattered light on the period of thermal treatment of studied samples are interpreted by a model involving the multiple light scattering events. The study shows the effect of increased oxygen concentration at places where relatively small clusters of thermal donors are formed. This offers an explanation for the “small diffusion coefficient of oxygen” paradox arising during modeling of the formation kinetics of thermal donors in silicon.
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