Slim edges in double-sided silicon 3D detectors

Abstract

Minimization of the insensitive edge area is one of thekey requirements for silicon radiation detectors to be used infuture silicon trackers. In 3D detectors this goal can be achievedwith the active edge, at the expense of a high fabrication processcomplexity. In the framework of the ATLAS 3D sensor collaboration,we produced modified 3D silicon sensors with a double-sidedtechnology. While this approach is not suitable to obtain activeedges, because it does not use a support wafer, it allows for anew type of edge termination, the slim edge. In this paper wereport on the development of the slim edge, from numericalsimulations to design and testing, proving that it workseffectively without increasing the fabrication complexity ofsilicon 3D detectors, and that it could be further optimized toreduce the insensitive edge region to less than 100 μm.