Development of active and slim edge terminations for 3D and planar detectors

Abstract

We report novel solutions for the edge termination in silicon detectors. In the framework of a project aimed at the optimization of 3D detectors with active edge, we have developed both active edges using a single sided process with support wafer, and slim edges using a double sided process without support wafer. TCAD simulations and experimental tests have been carried out to validate and compare the proposed approaches. While active edges can provide a better sensitivity up to a few microns from the physical edge, slim edges can simplify the fabrication technology while limiting the dead area at the edge to about 50 µm. The main design and technological issues are reported in this paper, along with selected results from TCAD simulations and electro-optical tests performed on these devices.