Edgeless and slim-edge solutions for silicon pixel sensors

Abstract

Applications of silicon pixel sensors in future HEP experiments (e.g., at the HL LHC) are setting increasing demands on the minimization of the dead area at the edge, calling for adequate design/technological solutions for edge termination. In this respect, significant advantages are offered by the adoption of 3D fabrication technologies, which allow for a wider choice of edge designs (among them, active edges) owing to the use of the third dimension within the sensor substrate. This paper reviews the most interesting approaches to edgeless and slim-edge sensors, with emphasis on the original solutions developed by Fondazione Bruno Kessler (Trento, Italy) in collaboration with the University of Trento and INFN in the past few years. In particular, planar sensors with active edge and double-sided 3D sensors with slim-edge are discussed. The main design and technological issues will be reported, as well as selected results from numerical device simulations and electrical/functional tests performed before and after irradiation.