Abstract
This paper presented the GaN-Based size-dependent ultrathin-film resonant cavity light-emitting diode (uT-RCLED) for highly collimation and light-collective efficiency. The cavity was bound by bottom silver mirror (∼97%) and top distributed Bragg reflector (DBR) with five pairs of SiO2/TiO2 (∼95%). The viewing angle of 50 µm (100 µm) uT-RCLED was near ±51° (±47°) through the beam profiler and presented the best light-collective efficiency of 8.18% (9.73%) within ±15° light extraction cone contrasted with regular non-DBR ultrathin-film light-emitting diodes (uT-LEDs) (6.57%). In addition, the absolute light output power of the 50 µm (100 µm) uT-RCLED was 95.26% (127.36%) much higher than the uT-LED. Besides, the micromation of RCLED influenced neither the resonant effect nor the collimating properties which opens a potential application for the LED microprojectors to meet the etendue limitation for maximum luminance output.
Published Version
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