Abstract
This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
