Abstract

ABSTRACTThis paper presents the results of XRD and PL spectrum studies for Si nano-clusters embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1735-1885°C. It was shown that variation of filament temperatures allows producing the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between the intensity of some photoluminescence bands and the concentrations of Si nanocrystallites and amorphous Si nanoclusters has been shown. The nature of light emission is discussed.

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