Abstract
The influence of hot-wire-CVD regimes on light-emission and structural properties of Si nano-crystallites embedded in amorphous silicon was investigated. It was shown that a variation of temperature of the glass substrate and of the hot-wire allows the production of films with desirable parameters. Using X-ray diffraction and photoluminescence methods the dependence of photoluminescence properties on size of Si nano-crystallites is shown. The nature of light emission is discussed.
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