Abstract
An inorganic electron beam resist process for nanofabrication is described. Si-based bilayer inorganic electron beam resists, SixOy/Si3N4, Si3N4/SiO2, and SiO2/poly-Si were investigated. The SiO2/poly-Si system was found to be the most suitable for attaining deep undercut structures with fine patterns for metal–insulator–metal ultrasmall tunnel junction fabrication. Utilizing the multiple-angle deposition–oxidation deposition method, we have fabricated Al/Al2O3/Al tunnel junctions for which a clear Coulomb staircase was observed in the I–V characteristics at 12 K.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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