Abstract
We have developed an SiO2/poly-Si multilayered electron beam resist process in order to overcome the resolution limit in conventional polymer electron beam resists and to form suspended masks for ultrasmall metal-insulator-metal tunnel junction fabrication. Using a solution of buffered HF and a mixed solution of HNO3 and HF as etching solutions for SiO2 and poly-Si, respectively, suspended masks for metal depositions were produced. Utilizing a multiple-angle deposition-oxidation-deposition method, we have realized an ultrasmall Al/Al2O3/Al tunnel junction array which exhibits a clear Coulomb staircase in the current-voltage characteristics at 12 K.
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