Abstract
A new sub-THz leaky wave antenna based on grounded silicon substrate for chip to chip communication applications is presented. The proposed leaky wave antenna is based on sinusoidally modulated surface reactance. This surface reactance is implemented by using varying width strips on the top of a grounded silicon substrate. Two approaches for developing these strips are studied. These two approaches are based on either highly doped silicon strips or gold strips. Both the doped silicon and the gold are presented by using their corresponding Drude models at the proposed operating frequency. Comparisons between the properties of these two approaches are presented to show the applicability of each one.
Highlights
The development of modern wireless communication systems requires a wide frequency bandwidth
Integrating antenna system on a silicon substrate with other mm-wave components and circuits is a key technology for the mass market emerging mm-wave and subTHz communication systems
It is quite clear that the dissipative properties of doped silicon antenna has a significant effect on reducing the radiation efficiency compared with gold strips antenna
Summary
The development of modern wireless communication systems requires a wide frequency bandwidth. This sinusoidally modulated reactance surface is implemented by different techniques like varying width conducting strips on a grounded dielectric slab Another example of a sinusoidally modulated mm-wave LWA based on inset dielectric waveguide is discussed in [15]. Active silicon components are found to be suitable for mm-wave circuits in different mm-wave and sub-THz applications [19], [20] This is the motivation in this paper to introduce the idea of using highly doped silicon to integrate a sinusoidally modulated leaky wave antenna with sub-THz active circuits. This configuration can be quite useful for chip-to-chip communication [1], [21].
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