Sintering characteristics of plate-like bismuth titanate ceramics with preferred c - axis orientation for memory storage devices

Abstract

Bismuth titanate (Bi4Ti3O12) (BIT) has been an attractive material due to its high Curie temperature, large remnant polarization and relatively low processing temperature, making it suitable for piezoelectric, pyroelectric and non-volatile random access memory storage devices. In this present work, polycrystalline textured bismuth titanate ceramics were synthesised by the cost-effective molten salt synthesis method. The effect of sintering conditions on the structural, morphological and dielectric properties have been carried out in detail. The X-ray diffraction studies reveal the formation of the monophasic structure of BIT ceramics with a preferential orientation along the c-axis. It is also noticed that the orientation along the c-axis increases with an increase in sintering temperature. Interestingly, the parameters like crystallite size and micro-strain calculated from the Williamson - Hall method could be tailored as a function of sintering temperature. The microstructural studies carried out using FESEM technique suggested the presence of plate-like morphology of BIT ceramics and subsequently, the elemental mapping analysis used to confirm the uniform distribution of the elements Bi, Ti and O present in the ceramic sample. The Fourier transform infrared and X-ray photoelectron spectroscopic studies have been done to identify the constituent chemical bonds and oxidation states of BIT ceramics. Interestingly, it is noted that the value of the dielectric constant increases with the increase in sintering temperature of BIT ceramics. Furthermore, the high dielectric constant value of 200 obtained at 100 kHz for 950 °C sintered sample could establish this material for the embedded capacitor in memory storage devices.