Influence of excess bismuth oxide on the structural and dielectric characteristics of textured Bi4Ti3O12 ceramics

Abstract

Bismuth titanate (Bi4Ti3O12), an Aurivillius family of ferroelectric oxide, has been widely investigated due to its large remnant polarization, high Curie temperature, high dielectric constant and relatively low tangent for the application in information memory storage devices. In this work, polycrystalline bismuth titanate ceramics samples with different amounts of excess Bi2O3 (3 and 5 wt%) were prepared using a low temperature, cost-effective molten salt synthesis method. The structural, microstructural and dielectric properties depend on the addition of excess Bi2O3 and the sintering duration of Bi4Ti3O12 ceramics. Moreover, the X-ray diffraction studies revealed the effect of excess bismuth oxide on the formation of preferential orientation along the c-axis. It is also observed that the orientation factor along the c-axis increases with an increase in the sintering duration for different content of bismuth oxide. The morphological studies revealed the oriented plate-like structure of bismuth titanate ceramics associated with the enhanced growth of grains. It is noticed from the EDAX analysis that the addition of excess bismuth oxide compensated the volatilization of bismuth ions in the crystal lattice of Bi4Ti3O12 ceramics. The dielectric property studies have exhibited a high value of dielectric constant (εr ~ 190), and low tangent loss factor (tanδ ~ 0.08) for the optimum bismuth oxide content of 5 wt% added Bi4Ti3O12 ceramics. Hence, we suggest that these materials could be utilized for the high energy storage capacity of non-volatile memory devices.