Single-layer Cu Gate Electrode for Large Display Devices

Abstract

The feasibility of single Cu layer as bottom gate electrode for large display devices is proposed with adding a thin Cu-Mn alloy as adhesion layer on Corning EAGLE XG® glass substrate. This thin < 10 nm Cu-Mn alloy layer is converted to a pure Cu after annealing by Mn-diffusion to glass. Thus, this stack behaves as a single Cu layer in terms of process. The lowest resistivity of 500 nm Cu stack with 10 nm of 0.5 at.% Mn in the Cu alloy is <1.8 μOhm-cm, and it passed 3 N tape adhesion test after annealing at 300 °C for 60 seconds.