Abstract
We demonstrate single layer Cu interconnects using thin CuMn alloy as a temporary adhesion layer. After short annealing at 300°C for 60 s of a 10 nm CuMn alloy with 500 nm of Cu film, CuMn alloy layer is converted to pure Cu and the Mn is reacted with glass to form MnOx serving as an adhesion layer. After optimization of Mn concentration, alloy thickness, annealing environment, time and temperature, a resistivity lower than 1.8 μΩ·cm of the electrode was achieved. We also evaluated the effect of glass surface treatment to confirm the sensitivity of this process depending on substrate preparation conditions. This process has been shown to be very stable for different acid treatments on display glasses. It is also compared to a Ti/Cu stack as a reference.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
