(Invited) Improved Copper Electrode Integration for Thin Film Electronics on Glass

Abstract

We demonstrate single layer Cu interconnects using thin CuMn alloy as a temporary adhesion layer. After short annealing at 300°C for 60 s of a 10 nm CuMn alloy with 500 nm of Cu film, CuMn alloy layer is converted to pure Cu and the Mn is reacted with glass to form MnOx serving as an adhesion layer. After optimization of Mn concentration, alloy thickness, annealing environment, time and temperature, a resistivity lower than 1.8 μΩ·cm of the electrode was achieved. We also evaluated the effect of glass surface treatment to confirm the sensitivity of this process depending on substrate preparation conditions. This process has been shown to be very stable for different acid treatments on display glasses. It is also compared to a Ti/Cu stack as a reference.