Abstract
Atomic probe tomography (APT) samples with Al/Ni multilayer structure were successfully prepared by using a focused ion beam (FIB), combining with a field emission scanning electron microscope, with a new single-wedge lift-out method and a reduced amorphous damage layer of Ga ions implantation. The optimum vertex angle and preparation parameters of APT sample were discussed. The double interdiffusion relationship of the multilayer films was successfully observed by the local electrode APT, which laid a foundation for further study of the interface composition and crystal structure of the two-phase composites.
Highlights
Preparation Based on Dual-Beam-focused ion beam (FIB).Atomic probe tomography (APT) is the highest spatial resolution element analysis and testing equipment [1]
APT sample were successfully prepared by the focused ion beam technique, which reduced the amorphous damage layer of Ga ions
APT samples were prepared by Auriga focused ion beam field emission scanning double beam electron microscopy (FIB/SEM) produced by Zeiss (Oberkochen, Germany)
Summary
Atomic probe tomography (APT) is the highest spatial resolution element analysis and testing equipment [1] It mainly involves materials, physics, chemistry, biology and other research fields. The sensitivity is close to one millionth It is especially suitable for the study of nanoscale microstructure (precipitation, cluster, etc.), and various internal interfaces (grain boundary (GB), phase boundary, interlayer interface in multilayer structure, etc.) can be used to observe and study the segregation behavior, size and distribution of elements on the interface, and the distribution and composition of micro precipitates. Al/Ni multilayers are composed of alternating layers of Al and Ni, which have the characteristics of high chemical energy storage, fast energy release and fast combustion They have potential application prospects in the following reaction ignition, thermal battery ignition and local heating. APT sample were successfully prepared by the focused ion beam technique, which reduced the amorphous damage layer of Ga ions
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