Single-step inductively coupled plasma etching of sputtered Nb2O5/SiO2 multilayer stacks using chromium etch mask

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This paper presents the dry etching characteristics of Nb2O5/SiO2 multilayer stacks deposited using ion beam sputtering. Dry etching is achieved by using a combination of CHF3 and Ar gases in an inductively coupled plasma (ICP)-reactive ion etching system. The effect of the etching parameters such as the gas ratio (CHF3/Ar), radio-frequency power, ICP power, chamber pressure, and temperature is investigated. An etching recipe is optimized to achieve a high etch rate, good selectivity, and optimum etch profile. The optimized etching recipe provides a single step etch solution for both dielectric materials. Furthermore, the deposition and structuring process of a chromium based etch mask is investigated.