Abstract

We present a single shot low coherence white light Hilbert phase microscopy (WL-HPM) for quantitative phase imaging of Si opto-electronic devices, i.e., Si integrated circuits (Si-ICs) and Si solar cells. White light interferograms were recorded by a color CCD camera and the interferogram is decomposed into the three colors red, green and blue. Spatial carrier frequency of the WL interferogram was increased sufficiently by means of introducing a tilt in the interferometer. Hilbert transform fringe analysis was used to reconstruct the phase map for red, green and blue colors from the single interferogram. 3D step height map of Si-ICs and Si solar cells was reconstructed at multiple wavelengths from a single interferogram. Experimental results were compared with Atomic Force Microscopy and they were found to be close to each other. The present technique is non-contact, full-field and fast for the determination of surface roughness variation and morphological features of the objects at multiple wavelengths.

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