Single oscillator model of undoped and co-doped ZnO thin films

Abstract

Undoped and co-doped zinc oxide thin films were deposited on glass substrates using a chemical spray technique. The experimental Lorentz profiles of co-doped ZnO thin films were measured in the spectral region 720–1750nm. A single oscillator model of the resulted materials is constructed by calculation of: zero-frequency refractive index (no), average interband oscillator wavelength (λo), oscillator strength (So), dispersion energy (Ed), single-effective oscillator energy (Eo), plasma oscillation frequency (ωp) and interband transition strength moments (M−1, M−3).