Abstract
The dependence of 0.13µm NMOS single event transient on linear energy transfer (LET) is studied and integrated into a single event transient (SET) pulses fault injection model. A modified double exponential function with four parameters that are related to LET is used to fit the single event transient pulsed current. By translating into the LET-dependent model, it can predict the charge collection without Technology Computer Aided Design (TCAD) simulation when LET is changed. The SRAM unit is built using the proposed single event transient pulses fault injection model into the sensitive node, proving the practicability and reasonableness of the proposed fault injection model for circuit-level single-event effect (SEE) simulation.
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