Single event performance of FED based SRAMs using numerical simulation

Abstract

In this work, single event performance of field effect diode (FED) devices have been investigated. Three variations of FED structures have been taken up for the study, and they are, (i) regular FED, (ii) modified FED-I, and (iii) modified FED-II. The study can be split into parts, (i) single event transients (SET) in the FED devices which is used to extract the sensitive location of the device, and (ii) single event upsets in FED-based SRAM cells which is used to extract the critical radiation dose i.e. the minimum dose required to flip the cell content. Among the three FED structures, the collected charge due to SET is maximum in regular FED structure, and the critical dose is minimum in regular FED structure. From the MOSFET literature, it has been found that the single event performances of the MOSFET devices are much superior to the FED devices.