Abstract
The experimental results of single-event burnout (SEB) of super-junction power MOSFETs are reported for the first time in comparison with those of standard MOSFETs. Similar tendencies were observed from both results. While a super-junction MOSFET (SJ-MOSFET) has an attractive electrical performance such as low on-resistance and high breakdown voltage, the experiment demonstrated that there was no structural advantage in SEB tolerance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
