Research on single-event burnout hardening of super-junction MOSFET

Abstract

When superjunction power devices work in spacecraft, they have to face extremely high radiation intensity, among which the single event effect is very serious, it will cause different types of damage to power devices, and then have catastrophic consequences for spacecraft, and With the increasing complexity and device integration of spacecraft systems, the harm of single event effects will become more serious. Therefore, it is very necessary to conduct research on anti-single event burnout of superjunction MOSFETs in aerospace applications. In order to solve the problem of single-event burnout of super-junction MOSFET under heavy-ion strike, the single event radiation effect and radiation hardening of traditional super-junction MOSFET devices are studied by using sentaurus TCAD simulation tool. The simulation results show that the device is most sensitive to the single-event effect when heavy-ion are vertically incident at the middle of the gate of the super-junction device, and the opening of the parasitic bipolar junction transistor is an important reason for the single-event burnout. A 200 V radiation-hardened super-junction power MOSFET device structure is designed. The experimental results show that the designed super-junction power MOSFET device with a buffer layer structure relieves the strong electric field on the backside during heavy-ion strike, has good resistance to single-event burnout, and improves the robustness of the device in aerospace applications.