Abstract
This paper presents an experimental comparison among Super Junction (SJ) MOSFETs of the old and new generation and Silicon Carbide (SiC) MOSFET which are used in 1 kW DC to AC converter for photovoltaic applications. For the SJ MOSFET three different power semiconductors are investigated: one belonging to the old generation and two to the new generation. Switching performances and challenges of using new generation of SJ MOSFETs and SiC MOSFETs are discussed. In particular, the resulting switching trajectories as well as switching losses are investigated and compared. It is found that the measured switching waveforms with a SJ MOSFETs of the new generation show better performance in term of turn-on and turn off time, but the overvoltage peaks during turn-off are higher compared to the SJ MOSFET of the old generation. SiC MOSFET shows also good switching performance and the overvoltage peaks and oscillations are strongly reduced compared to the SJ MOSFETs of new generation.
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